elektronische bauelemente dtc143te / dtc143tua dtc143tca / DTC143TSA / dtc143tm npn digital transistors (built-in resistors) 25-oct-2011 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). the bias resistors consist of thin-film resistors w ith complete isolation to allow positive biasing of the input. they also have the advantage of almost completely eliminating parasitic effects. only the on/off conditions need to be set for operation, making device design easy. equivalent circuit absolute maximum ratings (t a = 25 c unless otherwise noted) limits (dtc143t ) parameter symbol m e ua ca sa unit collector-base voltage v (br)cbo 50 v collector-emitter voltage v (br)ceo 50 v emitter-base voltage v (br)ebo 5 collector current i c 100 ma collector dissipation p c 100 150 200 300 mw junction & storage temperature t j , t stg 150, -55~150 c dtc143te (sot-523) addreviated symbol 03 dtc143tua (sot-323) addreviated symbol 03 dtc143tm (sot-723) addreviated symbol 03 dtc143tca (sot-23) addreviated symbol 03 dta143tsa (to-92s)
elektronische bauelemente dtc143te / dtc143tua dtc143tca / DTC143TSA / dtc143tm npn digital transistors (built-in resistors) 25-oct-2011 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 50 - - v i c =50 a collector-emitter breakdown voltage v (br)ceo 50 - - v i c =1ma emitter-base breakdown voltage v (br)ebo 5 - - v i e =50 a collector cut-off current i cbo - - 0.5 a v cb =50v emitter cut-off current i ebo - - 0.5 a v eb =4v collector-emitter saturation voltage v ce(sat) - - 0.3 v i c =5ma, i b =0.25ma dc current transfer ratio h fe 100 - 600 v ce =5v, i c =1ma input resistance r 1 3.29 4.7 6.11 k transition frequency f t - 250 - mhz v o =10v, i o =5ma, f=100mhz characteristic curves
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